PJP9NA90 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJP9NA90
SMD Transistor Code: P9NA90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 205 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 31 nS
Drain-Source Capacitance (Cd): 143 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO-220AB
PJP9NA90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJP9NA90 Datasheet (PDF)
1.1. pjf9na90 pjp9na90.pdf 
Size:340K _panjit
PPJP9NA90 / PJF9NA90 / PJZ9NA90 900V N-Channel MOSFET 900 V 9 A Voltage Current Features RDS(ON), VGS@10V,ID@4.5A<1.4Ω ITO-220AB-F TO-220AB High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
Datasheet: PJP5NA80 , PJP6NA40 , PJP6NA70 , PJP6NA90 , PJP7NA60 , PJP7NA65 , PJP7NA80 , PJP8NA50 , IRF250 , PJU1NA50 , PJU1NA60 , PJU1NA60A , PJU1NA80 , PJU2NA60 , PJU2NA60H , PJU2NA70 , PJU3NA50 .
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