PJP9NA90 Datasheet. Specs and Replacement

Type Designator: PJP9NA90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220AB

PJP9NA90 substitution

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PJP9NA90 datasheet

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PJP9NA90

PPJP9NA90 / PJF9NA90 / PJZ9NA90 900V N-Channel MOSFET 900 V 9 A Voltage Current Features RDS(ON), VGS@10V,ID@4.5A... See More ⇒

Detailed specifications: PJP5NA80, PJP6NA40, PJP6NA70, PJP6NA90, PJP7NA60, PJP7NA65, PJP7NA80, PJP8NA50, NCEP15T14, PJU1NA50, PJU1NA60, PJU1NA60A, PJU1NA80, PJU2NA60, PJU2NA60H, PJU2NA70, PJU3NA50

Keywords - PJP9NA90 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.