All MOSFET. PJP9NA90 Datasheet

 

PJP9NA90 MOSFET. Datasheet pdf. Equivalent

Type Designator: PJP9NA90

SMD Transistor Code: P9NA90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 205 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 31 nS

Drain-Source Capacitance (Cd): 143 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220AB

PJP9NA90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJP9NA90 Datasheet (PDF)

1.1. pjf9na90 pjp9na90.pdf Size:340K _panjit

PJP9NA90 PJP9NA90

PPJP9NA90 / PJF9NA90 / PJZ9NA90 900V N-Channel MOSFET 900 V 9 A Voltage Current Features  RDS(ON), VGS@10V,ID@4.5A<1.4Ω ITO-220AB-F TO-220AB  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std.

Datasheet: PJP5NA80 , PJP6NA40 , PJP6NA70 , PJP6NA90 , PJP7NA60 , PJP7NA65 , PJP7NA80 , PJP8NA50 , IRF250 , PJU1NA50 , PJU1NA60 , PJU1NA60A , PJU1NA80 , PJU2NA60 , PJU2NA60H , PJU2NA70 , PJU3NA50 .

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