All MOSFET. PJP9NA90 Datasheet

 

PJP9NA90 Datasheet and Replacement


   Type Designator: PJP9NA90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220AB
 

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PJP9NA90 Datasheet (PDF)

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PJP9NA90

PPJP9NA90 / PJF9NA90 / PJZ9NA90 900V N-Channel MOSFET 900 V 9 A Voltage Current Features RDS(ON), VGS@10V,ID@4.5A

Datasheet: PJP5NA80 , PJP6NA40 , PJP6NA70 , PJP6NA90 , PJP7NA60 , PJP7NA65 , PJP7NA80 , PJP8NA50 , NCEP15T14 , PJU1NA50 , PJU1NA60 , PJU1NA60A , PJU1NA80 , PJU2NA60 , PJU2NA60H , PJU2NA70 , PJU3NA50 .

History: 2SJ589LS

Keywords - PJP9NA90 MOSFET datasheet

 PJP9NA90 cross reference
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