PJU3NA80 Datasheet. Specs and Replacement

Type Designator: PJU3NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-251AB

PJU3NA80 substitution

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PJU3NA80 datasheet

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PJU3NA80

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A... See More ⇒

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PJU3NA80

PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A... See More ⇒

Detailed specifications: PJU1NA50, PJU1NA60, PJU1NA60A, PJU1NA80, PJU2NA60, PJU2NA60H, PJU2NA70, PJU3NA50, IRF1407, PJU4NA60, PJU4NA65, PJU4NA70, PJU4NA90, PJU5NA50, PJU5NA80, PJU6NA40, PJU6NA70

Keywords - PJU3NA80 MOSFET specs

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