All MOSFET. SFF10N60 Datasheet

 

SFF10N60 Datasheet and Replacement


   Type Designator: SFF10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

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SFF10N60 Datasheet (PDF)

 ..1. Size:97K  semiwell
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SFF10N60

SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features RDS(ON) Max 0.75 ohm at VGS = 10V Gate Charge ( Typical 48 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

 8.1. Size:176K  ssdi
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SFF10N60

 8.2. Size:147K  ssdi
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SFF10N60

 8.3. Size:184K  ssdi
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SFF10N60

Datasheet: SFF054Z , SFF100N20 , SFF10N100 , SFF10N100B , SFF10N100M , SFF10N100N , SFF10N100P , SFF10N100Z , MMIS60R580P , SFF110S , SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SFF11N80P , SFF11N80Z .

History: 2SK2146 | 19N10G-TMS4-T

Keywords - SFF10N60 MOSFET datasheet

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