SFF10N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFF10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F

SFF10N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFF10N60 Datasheet (PDF)

..1. Size:97K semiwell
sff10n60.pdf

SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features RDS(ON) Max 0.75 ohm at VGS = 10V Gate Charge ( Typical 48 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

8.1. Size:176K ssdi
sff10n100n sff10n100p.pdf