SFF10N60 Datasheet and Replacement
Type Designator: SFF10N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220F
SFF10N60 substitution
SFF10N60 Datasheet (PDF)
sff10n60.pdf
SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features RDS(ON) Max 0.75 ohm at VGS = 10V Gate Charge ( Typical 48 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h
Datasheet: SFF054Z , SFF100N20 , SFF10N100 , SFF10N100B , SFF10N100M , SFF10N100N , SFF10N100P , SFF10N100Z , MMIS60R580P , SFF110S , SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SFF11N80P , SFF11N80Z .
History: 2SK2146 | 19N10G-TMS4-T
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History: 2SK2146 | 19N10G-TMS4-T
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