SFF10N60 Datasheet. Specs and Replacement

Type Designator: SFF10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220F

SFF10N60 substitution

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SFF10N60 datasheet

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SFF10N60

SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features RDS(ON) Max 0.75 ohm at VGS = 10V Gate Charge ( Typical 48 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h... See More ⇒

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SFF10N60

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SFF10N60

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SFF10N60

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Detailed specifications: SFF054Z, SFF100N20, SFF10N100, SFF10N100B, SFF10N100M, SFF10N100N, SFF10N100P, SFF10N100Z, 7N60, SFF110S, SFF116N10M, SFF116N10Z, SFF11N80B, SFF11N80M, SFF11N80N, SFF11N80P, SFF11N80Z

Keywords - SFF10N60 MOSFET specs

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