SFF20N60P Datasheet. Specs and Replacement

Type Designator: SFF20N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-259

SFF20N60P substitution

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SFF20N60P datasheet

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SFF20N60P

SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high tempera... See More ⇒

Detailed specifications: SFF150, SFF150C, SFF150M, SFF150Z, SFF15N80, SFF16N60NC, SFF20N60B, SFF20N60N, IRFB4110, SFF20P10J, SFF220-28, SFF230, SFF230-28, SFF230G, SFF230J, SFF230M, SFF230Z

Keywords - SFF20N60P MOSFET specs

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