SFF20P10J Datasheet and Replacement
Type Designator: SFF20P10J
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-257
SFF20P10J substitution
SFF20P10J Datasheet (PDF)
sff20p10j.pdf

SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features: Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high tempera
Datasheet: SFF150C , SFF150M , SFF150Z , SFF15N80 , SFF16N60NC , SFF20N60B , SFF20N60N , SFF20N60P , IRF630 , SFF220-28 , SFF230 , SFF230-28 , SFF230G , SFF230J , SFF230M , SFF230Z , SFF23N60M .
History: CMXDM7002A | IRFS840 | 2SJ604-S | IRFP4410ZPBF | NCE65T1K9K | AP60T03GS | QM2507W
Keywords - SFF20P10J MOSFET datasheet
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History: CMXDM7002A | IRFS840 | 2SJ604-S | IRFP4410ZPBF | NCE65T1K9K | AP60T03GS | QM2507W



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