SFF24N50 Datasheet and Replacement
Type Designator: SFF24N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-3
SFF24N50 substitution
SFF24N50 Datasheet (PDF)
sff24n50.pdf
SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts DESIGNERS DATA SHEET 0.2 N-Channel Features: Power MOSFET Rugged Construction with Polysilicon Gate Cell Low R and High Transconductance DS(ON) Excellent H
Datasheet: SFF23N60S2 , SFF23N60Z , SFF240 , SFF240-28 , SFF240J , SFF240JR , SFF240M , SFF240Z , K4145 , SFF24N50B , SFF24N50N , SFF24N50P , SFF250 , SFF250C , SFF250M , SFF250MDB , SFF250MUB .
History: SI5906DU | SSF2302 | JCS1404C | UK3018G-AL3-R | AFP2311A | RXH100N03 | FMV11N60E
Keywords - SFF24N50 MOSFET datasheet
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History: SI5906DU | SSF2302 | JCS1404C | UK3018G-AL3-R | AFP2311A | RXH100N03 | FMV11N60E
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