SFF24N50B Datasheet and Replacement
Type Designator: SFF24N50B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: MILPACK2
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SFF24N50B Datasheet (PDF)
sff24n50.pdf
SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts DESIGNERS DATA SHEET 0.2 N-Channel Features: Power MOSFET Rugged Construction with Polysilicon Gate Cell Low R and High Transconductance DS(ON) Excellent H
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RU40E25L | BUZ84 | AON6794 | CED05N8 | YTF250 | IRFHM792PBF | BL10N70-A
Keywords - SFF24N50B MOSFET datasheet
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History: RU40E25L | BUZ84 | AON6794 | CED05N8 | YTF250 | IRFHM792PBF | BL10N70-A
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