SFF40N30B MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFF40N30B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 177 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: MILPACK2

SFF40N30B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFF40N30B Datasheet (PDF)

..1. Size:150K ssdi
sff40n30b.pdf

6.1. Size:113K ssdi
sff40n30mub sff40n30z sff40n30m sff40n30mdb sff40n30zdb sff40n30zub.pdf

SFF40N30M Solid State Devices, Inc. SFF40N30Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 40 AMP , 300 Volts, 50 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF40N30 ___ ___ ___ Screening 2/ MOSFET __ = Not Screened

6.2. Size:150K ssdi
sff40n30.pdf