SFF4N60 Datasheet. Specs and Replacement

Type Designator: SFF4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220F

SFF4N60 substitution

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SFF4N60 datasheet

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SFF4N60

SFF4N60 SFF4N60 SFF4N60 SFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V,R (Max 2.2 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri... See More ⇒

Detailed specifications: SFF44N50M, SFF44N50S1, SFF44N50S2, SFF44N50Z, SFF450, SFF450C, SFF450M, SFF450Z, K2611, SFF50N20, SFF50N20B, SFF50N20N, SFF50N20P, SFF50N30M, SFF50N30Z, SFF60P05M, SFF60P05MDB

Keywords - SFF4N60 MOSFET specs

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