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SFF60P05MDB Specs and Replacement


   Type Designator: SFF60P05MDB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO-254
 

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SFF60P05MDB datasheet

 ..1. Size:82K  ssdi
 sff60p05mub sff60p05z sff60p05m sff60p05mdb sff60p05zdb sff60p05zub.pdf pdf_icon

SFF60P05MDB

SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone (562) 404-4470 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts DESIGNER S DATA SHEET 25 m typical Part Number / Ordering Information 1/ P-Channel SFF60P05 __ __ __ POWER MOSFET Screening 2/ __ = Not Screened ... See More ⇒

Detailed specifications: SFF4N60 , SFF50N20 , SFF50N20B , SFF50N20N , SFF50N20P , SFF50N30M , SFF50N30Z , SFF60P05M , AO4468 , SFF60P05MUB , SFF60P05Z , SFF60P05ZDB , SFF60P05ZUB , SFF6N100S1 , SFF7002KA2GW , SFF70N04S , SFF70N10M .

History: FXN0704F

Keywords - SFF60P05MDB MOSFET specs

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