SFF60P05Z MOSFET. Datasheet pdf. Equivalent
Type Designator: SFF60P05Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 200 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO-254Z
SFF60P05Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFF60P05Z Datasheet (PDF)
sff60p05mub sff60p05z sff60p05m sff60p05mdb sff60p05zdb sff60p05zub.pdf
SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts DESIGNERS DATA SHEET 25 m typical Part Number / Ordering Information 1/ P-Channel SFF60P05 __ __ __ POWER MOSFET Screening 2/ __ = Not Screened
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 3SK186
History: 3SK186
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