SFF75N05M
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFF75N05M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 80
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO-254
SFF75N05M
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFF75N05M
Datasheet (PDF)
..1. Size:34K ssdi
sff75n05m sff75n05z.pdf
SFF75N05MSFF75N05ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP50 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energy MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft recove
7.1. Size:40K ssdi
sff75n08m sff75n08z.pdf
SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate techn
7.2. Size:174K ssdi
sff75n06-28.pdf
PRELIMINARYSFF75N06-28SOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-177330 AMP 1/60 VOLTSDESIGNER'S DATA SHEET25m N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast switc
7.3. Size:31K ssdi
sff75n06m sff75n06z.pdf
SFF75N06MSFF75N06ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP60 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energyPOWER MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft r
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