SFF75N10 Datasheet. Specs and Replacement

Type Designator: SFF75N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-3

SFF75N10 substitution

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SFF75N10 datasheet

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SFF75N10

SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1 maximum current limited by package configuration Features Trench gate techn... See More ⇒

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Detailed specifications: SFF740, SFF75N05M, SFF75N05Z, SFF75N06-28, SFF75N06M, SFF75N06Z, SFF75N08M, SFF75N08Z, IRFB4227, SFF75N10B, SFF75N10N, SFF75N10P, SFF7N60, SFF801R2, SFF80N20M, SFF80N20MDB, SFF80N20MUB

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