All MOSFET. SFF75N10 Datasheet

 

SFF75N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFF75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-3

 SFF75N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFF75N10 Datasheet (PDF)

 ..1. Size:158K  ssdi
sff75n10.pdf

SFF75N10
SFF75N10

 0.1. Size:145K  ssdi
sff75n10b.pdf

SFF75N10
SFF75N10

 0.2. Size:168K  ssdi
sff75n10n sff75n10p.pdf

SFF75N10
SFF75N10

 8.1. Size:40K  ssdi
sff75n08m sff75n08z.pdf

SFF75N10
SFF75N10

SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate techn

 8.2. Size:174K  ssdi
sff75n06-28.pdf

SFF75N10
SFF75N10

PRELIMINARYSFF75N06-28SOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-177330 AMP 1/60 VOLTSDESIGNER'S DATA SHEET25m N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast switc

 8.3. Size:31K  ssdi
sff75n06m sff75n06z.pdf

SFF75N10
SFF75N10

SFF75N06MSFF75N06ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP60 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energyPOWER MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft r

 8.4. Size:34K  ssdi
sff75n05m sff75n05z.pdf

SFF75N10
SFF75N10

SFF75N05MSFF75N05ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP50 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energy MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft recove

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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