SFF75N10 Datasheet and Replacement
Type Designator: SFF75N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-3
SFF75N10 substitution
SFF75N10 Datasheet (PDF)
sff75n08m sff75n08z.pdf
SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate techn
Datasheet: SFF740 , SFF75N05M , SFF75N05Z , SFF75N06-28 , SFF75N06M , SFF75N06Z , SFF75N08M , SFF75N08Z , IRFB4227 , SFF75N10B , SFF75N10N , SFF75N10P , SFF7N60 , SFF801R2 , SFF80N20M , SFF80N20MDB , SFF80N20MUB .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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