SFF801R2 Datasheet. Specs and Replacement

Type Designator: SFF801R2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 76 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: MILPACK

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SFF801R2 datasheet

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SFF801R2

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 sff80n20mub sff80n20n sff80n20m sff80n20mdb sff80n20ndb sff80n20nub sff80n20p sff80n20pdb sff80n20pub sff80n20zub sff80n20z sff80n20zdb.pdf pdf_icon

SFF801R2

SFF80N20 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 80 AMP , 200 Volts, 25 m DESIGNER S DATA SHEET Avalanche Rated N-channel Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ MOSFET Screening 2/ __ = Not Screened TX ... See More ⇒

Detailed specifications: SFF75N06Z, SFF75N08M, SFF75N08Z, SFF75N10, SFF75N10B, SFF75N10N, SFF75N10P, SFF7N60, 2N7000, SFF80N20M, SFF80N20MDB, SFF80N20MUB, SFF80N20N, SFF80N20NDB, SFF80N20NUB, SFF80N20P, SFF80N20PDB

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