SFF80N20PDB Datasheet. Specs and Replacement

Type Designator: SFF80N20PDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-259

SFF80N20PDB substitution

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SFF80N20PDB datasheet

 ..1. Size:182K  ssdi
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SFF80N20PDB

SFF80N20 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 80 AMP , 200 Volts, 25 m DESIGNER S DATA SHEET Avalanche Rated N-channel Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ MOSFET Screening 2/ __ = Not Screened TX ... See More ⇒

 9.1. Size:144K  ssdi
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SFF80N20PDB

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Detailed specifications: SFF801R2, SFF80N20M, SFF80N20MDB, SFF80N20MUB, SFF80N20N, SFF80N20NDB, SFF80N20NUB, SFF80N20P, 2SK3878, SFF80N20PUB, SFF80N20Z, SFF80N20ZDB, SFF80N20ZUB, SFF840, SFF85N06M, SFF85N06Z, SFF9130

Keywords - SFF80N20PDB MOSFET specs

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