All MOSFET. SFF85N06M Datasheet

 

SFF85N06M MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFF85N06M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-254

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SFF85N06M Datasheet (PDF)

 ..1. Size:40K  ssdi
 sff85n06m sff85n06z.pdf

SFF85N06M SFF85N06M

SFF85N06M Solid State Devices, Inc. SFF85N06Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /60 Volts TO-254 and TO-254Z 7 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate technol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WSR7N65F

 

 
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