SFF85N06M Datasheet. Specs and Replacement

Type Designator: SFF85N06M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 135 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-254

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SFF85N06M datasheet

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SFF85N06M

SFF85N06M Solid State Devices, Inc. SFF85N06Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP (note 1) /60 Volts TO-254 and TO-254Z 7 mO N-Channel Trench Gate MOSFET Note 1 maximum current limited by package configuration Features Trench gate technol... See More ⇒

Detailed specifications: SFF80N20NUB, SFF80N20P, SFF80N20PDB, SFF80N20PUB, SFF80N20Z, SFF80N20ZDB, SFF80N20ZUB, SFF840, AO3401, SFF85N06Z, SFF9130, SFF9130-28D, SFF9130J, SFF9130M, SFF9130Z, SIS415DNT, SFF9140-28

Keywords - SFF85N06M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.