All MOSFET. SFF85N06Z Datasheet

 

SFF85N06Z Datasheet and Replacement


   Type Designator: SFF85N06Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-254Z
 

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SFF85N06Z Datasheet (PDF)

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SFF85N06Z

SFF85N06M Solid State Devices, Inc. SFF85N06Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /60 Volts TO-254 and TO-254Z 7 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate technol

Datasheet: SFF80N20P , SFF80N20PDB , SFF80N20PUB , SFF80N20Z , SFF80N20ZDB , SFF80N20ZUB , SFF840 , SFF85N06M , SPP20N60C3 , SFF9130 , SFF9130-28D , SFF9130J , SFF9130M , SFF9130Z , SIS415DNT , SFF9140-28 , SFF9140C .

History: WML099N10HGS | IRLI3705NPBF

Keywords - SFF85N06Z MOSFET datasheet

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