SFF9130 Datasheet and Replacement
Type Designator: SFF9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: MILPACK
SFF9130 substitution
SFF9130 Datasheet (PDF)
sff9130-28d.pdf

PRELIMINARYSFF9130-28DSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773-11 AMP-100 VOLTSDESIGNER'S DATA SHEET0.30 DUAL UNCOMMITEDFEATURES: P-CHANNEL POWER MOSFET Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability
Datasheet: SFF80N20PDB , SFF80N20PUB , SFF80N20Z , SFF80N20ZDB , SFF80N20ZUB , SFF840 , SFF85N06M , SFF85N06Z , 8205A , SFF9130-28D , SFF9130J , SFF9130M , SFF9130Z , SIS415DNT , SFF9140-28 , SFF9140C , SFF9140J .
History: 1N60E | RU30231R | IXCY01N90E | SM8007NSU | IRFP344PBF | IXFP26N30X3 | UT7317
Keywords - SFF9130 MOSFET datasheet
SFF9130 cross reference
SFF9130 equivalent finder
SFF9130 lookup
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History: 1N60E | RU30231R | IXCY01N90E | SM8007NSU | IRFP344PBF | IXFP26N30X3 | UT7317



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