SFF9130M MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFF9130M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-254

SFF9130M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFF9130M Datasheet (PDF)

..1. Size:170K ssdi
sff9130m sff9130z.pdf

7.1. Size:175K ssdi
sff9130-28d.pdf

PRELIMINARYSFF9130-28DSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-1773-11 AMP-100 VOLTSDESIGNER'S DATA SHEET0.30 DUAL UNCOMMITEDFEATURES: P-CHANNEL POWER MOSFET Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability

7.2. Size:172K ssdi
sff9130.pdf