SFF9230M Datasheet. Specs and Replacement
Type Designator: SFF9230M
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-254
SFF9230M substitution
- MOSFET ⓘ Cross-Reference Search
SFF9230M datasheet
sff9250l.pdf
Advanced Power MOSFET SFF9250L FEATURES BVDSS = -200 V Logic-Level Gate Drive RDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -12.6 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10uA (Max.) @ VDS=-200V Lower RDS(ON) 0.175 (Typ.) 1 2 3 1.Gate 2. ... See More ⇒
sff9244.pdf
Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 0.549 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒
sff9240.pdf
Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -7.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒
Detailed specifications: SFF9130M, SFF9130Z, SIS415DNT, SFF9140-28, SFF9140C, SFF9140J, SFF9140M, SFF9140Z, AON6380, SFF9230Z, RDX045N60FU6, SFF9240-28, SFF9240C, SFF9240J, SFF9240M, SFF9240Z, SFF9250L
Keywords - SFF9230M MOSFET specs
SFF9230M cross reference
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