SFP12N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51.7 nC
trⓘ - Rise Time: 50 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO220
SFP12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP12N65 Datasheet (PDF)
sfp12n65.pdf
SFP12N65SFP12N65SFP12N65SFP12N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFR18N15D
History: IRFR18N15D
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