SFP630 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
SFP630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP630 Datasheet (PDF)
sfp630.pdf
SFP630Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 9A, 200V,RDS(on)(Max 0.4)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral DescriptionGeneral Descript
sfp634.pdf
SFP634SFP634SFP634SFP634Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 9A, 250V, R (Max 0.45)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 41nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGenera
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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