All MOSFET. IRFSZ35 Datasheet

 

IRFSZ35 Datasheet and Replacement


   Type Designator: IRFSZ35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO220F
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IRFSZ35 Datasheet (PDF)

 8.1. Size:42K  1
 irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

IRFSZ35

 8.2. Size:498K  samsung
 irfsz34a.pdf pdf_icon

IRFSZ35

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.1. Size:280K  1
 irfsz14a.pdf pdf_icon

IRFSZ35

 9.2. Size:1006K  samsung
 irfsz24a.pdf pdf_icon

IRFSZ35

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

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History: SPA07N60C3 | APT10021JFLL | WMM07N65C4 | ZVN4210GTC | SM4186T9RL | TPCA8047-H | NP180N04TUJ

Keywords - IRFSZ35 MOSFET datasheet

 IRFSZ35 cross reference
 IRFSZ35 equivalent finder
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