All MOSFET. SFP730D Datasheet

 

SFP730D Datasheet and Replacement


   Type Designator: SFP730D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 76 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220
 

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SFP730D Datasheet (PDF)

 ..1. Size:260K  semiwell
 sfp730d.pdf pdf_icon

SFP730D

SemiWell Semiconductor SFP730D N-Channel MOSFET Features RDS(ON) Max 1.0 ohm at VGS = 10V Gate Charge ( Typical 18nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have

 8.1. Size:716K  winsemi
 sfp730.pdf pdf_icon

SFP730D

SFP730SFP730SFP730SFP730Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures5.5A,400V, R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral

Datasheet: SFP50N06R , SFP5N50 , SFP630 , SFP634 , SFP640 , SFP6N40 , SFP70N06 , SFP730 , RU7088R , SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 , SFP9640L , SFP9N50 , SFR9014TF .

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