SFP730D Datasheet. Specs and Replacement

Type Designator: SFP730D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

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SFP730D datasheet

 ..1. Size:260K  semiwell
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SFP730D

SemiWell Semiconductor SFP730D N-Channel MOSFET Features RDS(ON) Max 1.0 ohm at VGS = 10V Gate Charge ( Typical 18nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have... See More ⇒

 8.1. Size:716K  winsemi
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SFP730D

SFP730 SFP730 SFP730 SFP730 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 5.5A,400V, R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General... See More ⇒

Detailed specifications: SFP50N06R, SFP5N50, SFP630, SFP634, SFP640, SFP6N40, SFP70N06, SFP730, IRFZ48N, SFP740, SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF

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