SFP830 Datasheet and Replacement
Type Designator: SFP830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 76 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
SFP830 substitution
SFP830 Datasheet (PDF)
sfp830.pdf

SFP830Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 4.5A,500V,RDS(on)(Max 1.5)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral DescriptionGeneral Descrip
sfp830d.pdf

SemiWell Semiconductor SFP830D N-Channel MOSFET Features RDS(ON) Max 1.5 ohm at VGS = 10V Gate Charge ( Typical 20nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have
Datasheet: SFP634 , SFP640 , SFP6N40 , SFP70N06 , SFP730 , SFP730D , SFP740 , SFP75N08R , 60N06 , SFP830D , SFP840 , SFP9640L , SFP9N50 , SFR9014TF , SFR9024TM , SFR9034TF , SFR9110TF .
History: IRFR4510PBF | DH012N03I | WMN25N70EM | KIA3510A-252 | TPC8029
Keywords - SFP830 MOSFET datasheet
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History: IRFR4510PBF | DH012N03I | WMN25N70EM | KIA3510A-252 | TPC8029



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