All MOSFET. SFP830 Datasheet

 

SFP830 Datasheet and Replacement


   Type Designator: SFP830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220
 

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SFP830 Datasheet (PDF)

 ..1. Size:542K  winsemi
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SFP830

SFP830Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 4.5A,500V,RDS(on)(Max 1.5)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral DescriptionGeneral Descrip

 0.1. Size:214K  semiwell
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SFP830

SemiWell Semiconductor SFP830D N-Channel MOSFET Features RDS(ON) Max 1.5 ohm at VGS = 10V Gate Charge ( Typical 20nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have

Datasheet: SFP634 , SFP640 , SFP6N40 , SFP70N06 , SFP730 , SFP730D , SFP740 , SFP75N08R , 60N06 , SFP830D , SFP840 , SFP9640L , SFP9N50 , SFR9014TF , SFR9024TM , SFR9034TF , SFR9110TF .

History: STH240N10F7-2 | NTTFS5C680NL | SFP080N150C2 | IPI80N06S3-07 | NCE30P50G | HSBA3062 | ISCNH060D

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