SFP830D Datasheet. Specs and Replacement

Type Designator: SFP830D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 20 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220

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SFP830D datasheet

 ..1. Size:214K  semiwell
 sfp830d.pdf pdf_icon

SFP830D

SemiWell Semiconductor SFP830D N-Channel MOSFET Features RDS(ON) Max 1.5 ohm at VGS = 10V Gate Charge ( Typical 20nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have... See More ⇒

 8.1. Size:542K  winsemi
 sfp830.pdf pdf_icon

SFP830D

SFP830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 4.5A,500V,RDS(on)(Max 1.5 )@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General Description General Descrip... See More ⇒

Detailed specifications: SFP640, SFP6N40, SFP70N06, SFP730, SFP730D, SFP740, SFP75N08R, SFP830, IRF9640, SFP840, SFP9640L, SFP9N50, SFR9014TF, SFR9024TM, SFR9034TF, SFR9110TF, SFT1452

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