SFT210DE MOSFET. Datasheet pdf. Equivalent
Type Designator: SFT210DE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 40 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 125 °C
Rise Time (tr): 1 nS
Maximum Drain-Source On-State Resistance (Rds): 45 Ohm
Package: TO-72
SFT210DE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFT210DE Datasheet (PDF)
0.1. sft210de.pdf 
Size:97K _ssdi
SFT210DE Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 50 mA, 30 Volt, 1 nsec DESIGNER’S DATA SHEET High Speed Analog Part Number / Ordering Information 1/ N-Channel DMOSFET switch SFT210 DE __ │ │ Features: │ │ • Ultra-High Speed Switching – tON
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