SQM100N04-2M7 Datasheet and Replacement
Type Designator: SQM100N04-2M7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 744 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO-263
SQM100N04-2M7 substitution
SQM100N04-2M7 Datasheet (PDF)
sqm100n04-2m7.pdf

SQM100N04-2m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0027 100 % Rg and UIS testedID (A) 100 AEC-Q101 qualified dConfiguration SinglePackage TO-263 Material categorization: for definitions of
sqm100n04-3m5.pdf

SQM100N04-3m5www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0030 100 % Rg and UIS TestedID (A) 100 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance ple
sqm100n10-10.pdf

SQM100N10-10www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0105 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0120 100 % Rg and UIS TestedID (A) 100 Material categorization:Configuration Sin
Datasheet: SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM , SFW9640TM , SFW9Z34TM , IRF3205 , SQM100N04-3M5 , SQM100N10-10 , SQM110N04-02L , SQM110N04-03 , SQM110N04-03L , SQM110N04-04 , SQM110N05-06L , SQM110N06-04L .
Keywords - SQM100N04-2M7 MOSFET datasheet
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SQM100N04-2M7 substitution
SQM100N04-2M7 replacement



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