All MOSFET. SQM50N04-4M1 Datasheet

 

SQM50N04-4M1 Datasheet and Replacement


   Type Designator: SQM50N04-4M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 512 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-263
 

 SQM50N04-4M1 substitution

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SQM50N04-4M1 Datasheet (PDF)

 ..1. Size:173K  vishay
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SQM50N04-4M1

SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

 3.1. Size:165K  vishay
sqm50n04-4m0l.pdf pdf_icon

SQM50N04-4M1

SQM50N04-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0040 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Singl

 5.1. Size:168K  vishay
sqm50n04-5m0.pdf pdf_icon

SQM50N04-4M1

SQM50N04-5m0www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.005 100 % Rg and UIS TestedID (A) 50 AEC-Q101 QualifieddConfiguration Single Material categorization: For definitions of TO-263 compliance p

 9.1. Size:169K  vishay
sqm50p08-25l.pdf pdf_icon

SQM50N04-4M1

SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration

Datasheet: SQM25N15-52 , SQM35N30-97 , SQM40N10-30 , SQM40N15-38 , SQM40P10-40L , SQM47N10-24L , SQM50020EL , SQM50N04-4M0L , IRF530 , SQM50N04-5M0 , SQM50P03-07 , SQM50P04-09L , SQM50P06-15L , SQM50P08-25L , SQM60N06-15 , SQM60N20-35 , SQM85N03-06P .

History: WMN28N65F2 | RU20T8M7 | SM1A00NSG | STP8N120K5 | KF3N40D | SRC65R1K3ES | NCE01H11

Keywords - SQM50N04-4M1 MOSFET datasheet

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 SQM50N04-4M1 equivalent finder
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 SQM50N04-4M1 replacement

 

 
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