SQM60N06-15 Datasheet and Replacement
Type Designator: SQM60N06-15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 314 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-263
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SQM60N06-15 Datasheet (PDF)
sqm60n06-15.pdf

SQM60N06-15www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal Resistance AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Charac
sqm60n06.pdf

SQM60N06-15Vishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 Qualifiedd Characterization OngoingD Compliant to RoHS D
sqm60n20-35.pdf

SQM60N20-35www.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 200 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.035 AEC-Q101 qualified dID (A) 60 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - SQM60N06-15 MOSFET datasheet
SQM60N06-15 cross reference
SQM60N06-15 equivalent finder
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SQM60N06-15 replacement
History: SM6A12NSFP | FCPF7N60YDTU



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