All MOSFET. SQP120N06-06 Datasheet

 

SQP120N06-06 Datasheet and Replacement


   Type Designator: SQP120N06-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 119 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 96.5 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 708 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-220AB
 

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SQP120N06-06 Datasheet (PDF)

 ..1. Size:146K  vishay
 sqp120n06-06.pdf pdf_icon

SQP120N06-06

SQP120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 119 100 % Rg and UIS testedConfiguration SinglePackage TO-220 Material categorization: for definitions of co

 7.1. Size:132K  vishay
 sqp120n10-3m8.pdf pdf_icon

SQP120N06-06

SQP120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-220For definitions of comp

 7.2. Size:144K  vishay
 sqp120n10-09.pdf pdf_icon

SQP120N06-06

SQP120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0095 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration Single Material categorization:Package TO-220for definitions of

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