SQP120N10-09 Datasheet. Specs and Replacement
Type Designator: SQP120N10-09 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 635 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-220AB
SQP120N10-09 substitution
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SQP120N10-09 datasheet
sqp120n10-09.pdf
SQP120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0095 AEC-Q101 qualified d ID (A) 120 100 % Rg and UIS tested Configuration Single Material categorization Package TO-220 for definitions of ... See More ⇒
sqp120n10-3m8.pdf
SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0038 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS Tested Configuration Single Material categorization D TO-220 For definitions of comp... See More ⇒
sqp120n06-06.pdf
SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.006 AEC-Q101 qualified d ID (A) 119 100 % Rg and UIS tested Configuration Single Package TO-220 Material categorization for definitions of co... See More ⇒
Detailed specifications: SQM50P08-25L, SQM60N06-15, SQM60N20-35, SQM85N03-06P, SQM85N10-10, SQM85N15-19, SQP100P06-9M3L, SQP120N06-06, IRFP250, SQP120N10-3M8, SQP50N06-09L, SQP50P03-07, SQP60N06-15, SQP90P06-07L, SQR40N10-25, SQR50N03-06P, SQR50N04-3M8
Keywords - SQP120N10-09 MOSFET specs
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