SQP50N06-09L Datasheet and Replacement
Type Designator: SQP50N06-09L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 435 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
SQP50N06-09L Datasheet (PDF)
sqp50n06-09l.pdf

SQP50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.009 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.013 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Singleww
sqp50p03-07.pdf

SQP50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.0070 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0110 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration
sqp50p03-07.pdf

SQP50P03-07www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | TK7P65W | SFFX054Z
Keywords - SQP50N06-09L MOSFET datasheet
SQP50N06-09L cross reference
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SQP50N06-09L replacement
History: CHM85A3PAGP | TK7P65W | SFFX054Z



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