All MOSFET. SQP50N06-09L Datasheet

 

SQP50N06-09L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQP50N06-09L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-220

 SQP50N06-09L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQP50N06-09L Datasheet (PDF)

 ..1. Size:127K  vishay
 sqp50n06-09l.pdf

SQP50N06-09L SQP50N06-09L

SQP50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.009 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.013 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Singleww

 9.1. Size:176K  vishay
 sqp50p03-07.pdf

SQP50N06-09L SQP50N06-09L

SQP50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.0070 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0110 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration

 9.2. Size:1367K  cn vbsemi
 sqp50p03-07.pdf

SQP50N06-09L SQP50N06-09L

SQP50P03-07www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop V

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History: ZXMP10A13FTA | HR3N200 | IRFR9214

 

 
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