SQP50P03-07 MOSFET. Datasheet pdf. Equivalent
Type Designator: SQP50P03-07
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 103.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 764 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220AB
SQP50P03-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQP50P03-07 Datasheet (PDF)
sqp50p03-07.pdf
SQP50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.0070 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0110 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration
sqp50p03-07.pdf
SQP50P03-07www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop V
sqp50n06-09l.pdf
SQP50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.009 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.013 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Singleww
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: FRX130R2 | CST08N50D
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