All MOSFET. SQP60N06-15 Datasheet

 

SQP60N06-15 Datasheet and Replacement


   Type Designator: SQP60N06-15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220AB
 

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SQP60N06-15 Datasheet (PDF)

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SQP60N06-15

SQP60N06-15www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.015 AEC-Q101 QualifieddID (A) 56 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-220AB For definitions of complianc

Datasheet: SQM85N10-10 , SQM85N15-19 , SQP100P06-9M3L , SQP120N06-06 , SQP120N10-09 , SQP120N10-3M8 , SQP50N06-09L , SQP50P03-07 , 13N50 , SQP90P06-07L , SQR40N10-25 , SQR50N03-06P , SQR50N04-3M8 , SQR50N06-07L , SSF22A5E , SSF2418B , SSF2418EBK .

History: PSMN4R8-100PSE | HSP0048

Keywords - SQP60N06-15 MOSFET datasheet

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