SQP90P06-07L Datasheet and Replacement
Type Designator: SQP90P06-07L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1034 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: TO-220AB
SQP90P06-07L substitution
SQP90P06-07L Datasheet (PDF)
sqp90p06-07l.pdf

SQP90P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.0067 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.0088 100 % Rg and UIS testedID (A) -120 Material categorization:Configuration Singl
sqp90142e.pdf

SQP90142Ewww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB TrenchFET power MOSFET Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please seewww.vishay.com/doc?99912SSDGDTop ViewPRODUCT SUMMARYGVDS (V) 200RD
Datasheet: SQM85N15-19 , SQP100P06-9M3L , SQP120N06-06 , SQP120N10-09 , SQP120N10-3M8 , SQP50N06-09L , SQP50P03-07 , SQP60N06-15 , SKD502T , SQR40N10-25 , SQR50N03-06P , SQR50N04-3M8 , SQR50N06-07L , SSF22A5E , SSF2418B , SSF2418EBK , SSF2439E .
History: FDMD82100 | APM1110K | NCEP055N10M | FCMT199N60 | FDMS8020 | IPA60R600P7S | SRC65R180
Keywords - SQP90P06-07L MOSFET datasheet
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History: FDMD82100 | APM1110K | NCEP055N10M | FCMT199N60 | FDMS8020 | IPA60R600P7S | SRC65R180



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