All MOSFET. SQP90P06-07L Datasheet

 

SQP90P06-07L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQP90P06-07L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1034 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TO-220AB

 SQP90P06-07L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQP90P06-07L Datasheet (PDF)

 ..1. Size:143K  vishay
 sqp90p06-07l.pdf

SQP90P06-07L SQP90P06-07L

SQP90P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.0067 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.0088 100 % Rg and UIS testedID (A) -120 Material categorization:Configuration Singl

 9.1. Size:164K  vishay
 sqp90142e.pdf

SQP90P06-07L SQP90P06-07L

SQP90142Ewww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB TrenchFET power MOSFET Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please seewww.vishay.com/doc?99912SSDGDTop ViewPRODUCT SUMMARYGVDS (V) 200RD

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History: FDP8443F085

 

 
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