All MOSFET. SQR50N06-07L Datasheet

 

SQR50N06-07L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQR50N06-07L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 407 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO-252

 SQR50N06-07L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQR50N06-07L Datasheet (PDF)

 ..1. Size:139K  vishay
 sqr50n06-07l.pdf

SQR50N06-07L SQR50N06-07L

SQR50N06-07LVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0076 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.009 Package with Low Thermal ResistanceID (A) 50 100 % Rg and UIS TestedConfiguration Single AEC-Q101 Qu

 7.1. Size:139K  vishay
 sqr50n03-06p.pdf

SQR50N06-07L SQR50N06-07L

SQR50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0060 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0085 Material categorization:ID (A) 50For definitions of compliance please see Configuration Singl

 7.2. Size:141K  vishay
 sqr50n04-3m8.pdf

SQR50N06-07L SQR50N06-07L

SQR50N04-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

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History: 3SK186

 

 
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