All MOSFET. TJ100F06M3L Datasheet

 

TJ100F06M3L Datasheet and Replacement


   Type Designator: TJ100F06M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: TO-220SM
 

 TJ100F06M3L substitution

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TJ100F06M3L Datasheet (PDF)

 ..1. Size:290K  toshiba
 tj100f06m3l.pdf pdf_icon

TJ100F06M3L

TJ100F06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ100F06M3LTJ100F06M3LTJ100F06M3LTJ100F06M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 5.6 m (typ.) (VGS = -10 V)(2) Low leakage c

 7.1. Size:278K  toshiba
 tj100f04m3l.pdf pdf_icon

TJ100F06M3L

TJ100F04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ100F04M3LTJ100F04M3LTJ100F04M3LTJ100F04M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = -10 V)(2) Low leakage c

 9.1. Size:960K  jiejie micro
 jmtj100n02a.pdf pdf_icon

TJ100F06M3L

JMTJ100N02ADescriptionJMT N-channel Enhancement Mode Power MosFETFeatures Applications 20V, 8A Load SwitchRDS(ON)

Datasheet: R9523 , SSF440M , SSF450M , SSF5508D , SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L , 60N06 , TJ150F04M3L , TJ15S10M3 , TJ200F04M3L , TJ9A10M3 , TK100A06N1 , TK100A08N1 , TK100A10N1 , TK100E06N1 .

History: DMN3018SSD | IPP057N06N3G | SSW80R130S | IXFV36N50P | HY4N60D | IRF7N1405

Keywords - TJ100F06M3L MOSFET datasheet

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