All MOSFET. TK100E06N1 Datasheet

 

TK100E06N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK100E06N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   Rise Time (tr): 67 nS
   Drain-Source Capacitance (Cd): 3500 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0023 Ohm
   Package: TO-220

 TK100E06N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK100E06N1 Datasheet (PDF)

 ..1. Size:244K  toshiba
 tk100e06n1.pdf

TK100E06N1 TK100E06N1

TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)

 ..2. Size:246K  inchange semiconductor
 tk100e06n1.pdf

TK100E06N1 TK100E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

 7.1. Size:247K  toshiba
 tk100e08n1.pdf

TK100E06N1 TK100E06N1

TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)

 7.2. Size:246K  inchange semiconductor
 tk100e08n1.pdf

TK100E06N1 TK100E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M

 8.1. Size:247K  toshiba
 tk100e10n1.pdf

TK100E06N1 TK100E06N1

TK100E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E10N1TK100E10N1TK100E10N1TK100E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)

 8.2. Size:245K  inchange semiconductor
 tk100e10n1.pdf

TK100E06N1 TK100E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E10N1ITK100E10N1FEATURESLow drain-source on-resistance:RDS(on) 3.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M

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