TK100E06N1 Datasheet. Specs and Replacement

Type Designator: TK100E06N1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 255 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO-220

TK100E06N1 substitution

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TK100E06N1 datasheet

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TK100E06N1

TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E06N1 TK100E06N1 TK100E06N1 TK100E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) ... See More ⇒

 ..2. Size:246K  inchange semiconductor
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TK100E06N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E06N1 ITK100E06N1 FEATURES Low drain-source on-resistance RDS(on) 2.3m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒

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TK100E06N1

TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E08N1 TK100E08N1 TK100E08N1 TK100E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) ... See More ⇒

 7.2. Size:246K  inchange semiconductor
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TK100E06N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E08N1 ITK100E08N1 FEATURES Low drain-source on-resistance RDS(on) 3.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M... See More ⇒

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Detailed specifications: TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L, TJ9A10M3, TK100A06N1, TK100A08N1, TK100A10N1, AOD4184A, TK100E08N1, TK100E10N1, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E, TK10E60W, TK10J80E

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