TK100E06N1 - аналоги и даташиты транзистора

 

TK100E06N1 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TK100E06N1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 67 ns
   Cossⓘ - Выходная емкость: 3500 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для TK100E06N1

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK100E06N1 Datasheet (PDF)

 ..1. Size:244K  toshiba
 tk100e06n1.pdf pdf_icon

TK100E06N1

TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)

 ..2. Size:246K  inchange semiconductor
 tk100e06n1.pdf pdf_icon

TK100E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

 7.1. Size:247K  toshiba
 tk100e08n1.pdf pdf_icon

TK100E06N1

TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)

 7.2. Size:246K  inchange semiconductor
 tk100e08n1.pdf pdf_icon

TK100E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TJ100F06M3L , TJ150F04M3L , TJ15S10M3 , TJ200F04M3L , TJ9A10M3 , TK100A06N1 , TK100A08N1 , TK100A10N1 , HY1906P , TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , TK10J80E .

History: WMJ25N70EM | WML13N50C4 | AONV200A70 | WMS04N10T1 | IPD60R280CFD7 | OSG80R380PF | CJAC50P03

 

 
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