TK100L60W
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK100L60W
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 797
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 360
nC
trⓘ - Rise Time: 130
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
TO-3P
TK100L60W
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK100L60W
Datasheet (PDF)
..1. Size:246K toshiba
tk100l60w.pdf 
TK100L60WMOSFETs Silicon N-Channel MOS (DTMOS)TK100L60WTK100L60WTK100L60WTK100L60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.015 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching
9.1. Size:217K toshiba
tk100f06k3.pdf
TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0m (typ.) 10.0 0.3 High forward transfer admittance: |Yfs| = 174 S (typ.) 0.4 0.19.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS
9.2. Size:247K toshiba
tk100e08n1.pdf
TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
9.3. Size:237K toshiba
tk100s04n1l.pdf
TK100S04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK100S04N1LTK100S04N1LTK100S04N1LTK100S04N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current
9.4. Size:280K toshiba
tk100f04k3l.pdf
TK100F04K3LMOSFETs Silicon N-channel MOS (U-MOS)TK100F04K3LTK100F04K3LTK100F04K3LTK100F04K3L1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(2) Low leakage cur
9.5. Size:230K toshiba
tk100a06n1.pdf
TK100A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A06N1TK100A06N1TK100A06N1TK100A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
9.6. Size:211K toshiba
tk100f04k3.pdf
TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 m (typ.) 10.0 0.3 0.4 0.1 High forward transfer admittance: |Yfs| = 174 S (typ.) 9.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS
9.7. Size:231K toshiba
tk100a08n1.pdf
TK100A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A08N1TK100A08N1TK100A08N1TK100A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
9.8. Size:234K toshiba
tk100a10n1.pdf
TK100A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A10N1TK100A10N1TK100A10N1TK100A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
9.9. Size:244K toshiba
tk100e06n1.pdf
TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
9.10. Size:247K toshiba
tk100e10n1.pdf
TK100E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E10N1TK100E10N1TK100E10N1TK100E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
9.11. Size:274K ixys
ixtk100n25p ixtt100n25p ixtq100n25p.pdf
IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID
9.12. Size:293K first silicon
ftk100n10p.pdf
SEMICONDUCTORFTK100N10PTECHNICAL DATAN-Channel Power MOSFET (100V/100A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drai
9.13. Size:246K inchange semiconductor
tk100e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
9.14. Size:252K inchange semiconductor
tk100a06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100A06N1ITK100A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 2.7m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLU
9.15. Size:252K inchange semiconductor
tk100a10n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK100A10N1ITK100A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 3.8m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA
9.16. Size:246K inchange semiconductor
tk100e06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
9.17. Size:245K inchange semiconductor
tk100e10n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E10N1ITK100E10N1FEATURESLow drain-source on-resistance:RDS(on) 3.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
