TK100L60W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK100L60W
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 797 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 360 nC
trⓘ - Время нарастания: 130 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-3P
TK100L60W Datasheet (PDF)
tk100l60w.pdf
TK100L60WMOSFETs Silicon N-Channel MOS (DTMOS)TK100L60WTK100L60WTK100L60WTK100L60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.015 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching
tk100f06k3.pdf
TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0m (typ.) 10.0 0.3 High forward transfer admittance: |Yfs| = 174 S (typ.) 0.4 0.19.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS
tk100e08n1.pdf
TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
tk100s04n1l.pdf
TK100S04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK100S04N1LTK100S04N1LTK100S04N1LTK100S04N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current
tk100f04k3l.pdf
TK100F04K3LMOSFETs Silicon N-channel MOS (U-MOS)TK100F04K3LTK100F04K3LTK100F04K3LTK100F04K3L1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(2) Low leakage cur
tk100a06n1.pdf
TK100A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A06N1TK100A06N1TK100A06N1TK100A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
tk100f04k3.pdf
TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 m (typ.) 10.0 0.3 0.4 0.1 High forward transfer admittance: |Yfs| = 174 S (typ.) 9.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS
tk100a08n1.pdf
TK100A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A08N1TK100A08N1TK100A08N1TK100A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
tk100a10n1.pdf
TK100A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A10N1TK100A10N1TK100A10N1TK100A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
tk100e06n1.pdf
TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
tk100e10n1.pdf
TK100E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E10N1TK100E10N1TK100E10N1TK100E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
ixtk100n25p ixtt100n25p ixtq100n25p.pdf
IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID
ftk100n10p.pdf
SEMICONDUCTORFTK100N10PTECHNICAL DATAN-Channel Power MOSFET (100V/100A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drai
tk100e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
tk100a06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100A06N1ITK100A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 2.7m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLU
tk100a10n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK100A10N1ITK100A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 3.8m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA
tk100e06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
tk100e10n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E10N1ITK100E10N1FEATURESLow drain-source on-resistance:RDS(on) 3.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918