TK10E60W Datasheet. Specs and Replacement

Type Designator: TK10E60W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220

TK10E60W substitution

- MOSFET ⓘ Cross-Reference Search

 

TK10E60W datasheet

 ..1. Size:251K  toshiba
tk10e60w.pdf pdf_icon

TK10E60W

TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E60W TK10E60W TK10E60W TK10E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 ..2. Size:246K  inchange semiconductor
tk10e60w.pdf pdf_icon

TK10E60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E60W ITK10E60W FEATURES Low drain-source on-resistance RDS(on) 0.38 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 9.1. Size:421K  toshiba
tk10e80w.pdf pdf_icon

TK10E60W

TK10E80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E80W TK10E80W TK10E80W TK10E80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan... See More ⇒

 9.2. Size:246K  inchange semiconductor
tk10e80w.pdf pdf_icon

TK10E60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E80W ITK10E80W FEATURES Low drain-source on-resistance RDS(on) 0.55 . Enhancement mode Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

Detailed specifications: TK100A10N1, TK100E06N1, TK100E08N1, TK100E10N1, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E, IRF3205, TK10J80E, TK10P60W, TK10Q60W, TK10V60W, TK11A65W, TK11P65W, TK11Q65W, TK11S10N1L

Keywords - TK10E60W MOSFET specs

 TK10E60W cross reference

 TK10E60W equivalent finder

 TK10E60W pdf lookup

 TK10E60W substitution

 TK10E60W replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs