All MOSFET. TK10P60W Datasheet

 

TK10P60W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK10P60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: DPAK

TK10P60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK10P60W Datasheet (PDF)

0.1. tk10p60w.pdf Size:244K _toshiba

TK10P60W
TK10P60W

TK10P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W TK10P60W TK10P60W TK10P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

Datasheet: TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , IRF540 , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W .

 

 
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