TK10P60W Datasheet and Replacement
Type Designator: TK10P60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: DPAK
TK10P60W substitution
TK10P60W Datasheet (PDF)
tk10p60w.pdf

TK10P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10P60WTK10P60WTK10P60WTK10P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk10p60w.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK10P60WFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
tk10p50w.pdf

TK10P50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10P50WTK10P50WTK10P50WTK10P50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
Datasheet: TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , IRF840 , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W .
History: SSF5NS70GB | IPP50N12S3L-15
Keywords - TK10P60W MOSFET datasheet
TK10P60W cross reference
TK10P60W equivalent finder
TK10P60W lookup
TK10P60W substitution
TK10P60W replacement
History: SSF5NS70GB | IPP50N12S3L-15



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