All MOSFET. TK10P60W Datasheet

 

TK10P60W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK10P60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: DPAK

TK10P60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK10P60W Datasheet (PDF)

1.1. tk10p60w.pdf Size:244K _toshiba

TK10P60W TK10P60W

TK10P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W TK10P60W TK10P60W TK10P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

1.2. tk10p60w.pdf Size:208K _inchange_semiconductor

TK10P60W TK10P60W

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK10P60W ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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