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TK10Q60W Spec and Replacement


   Type Designator: TK10Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: IPAK

 TK10Q60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK10Q60W Specs

 ..1. Size:246K  toshiba
 tk10q60w.pdf pdf_icon

TK10Q60W

TK10Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10Q60W TK10Q60W TK10Q60W TK10Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 ..2. Size:234K  inchange semiconductor
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TK10Q60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10Q60W ITK10Q60W FEATURES Low drain-source on-resistance RDS(on) 0.43 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , TK10P60W , 20N60 , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W .

Keywords - TK10Q60W MOSFET specs

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