TK12J60W Datasheet. Specs and Replacement

Type Designator: TK12J60W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-3P

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TK12J60W datasheet

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 tk12j60w.pdf pdf_icon

TK12J60W

TK12J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12J60W TK12J60W TK12J60W TK12J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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 tk12j60u.pdf pdf_icon

TK12J60W

TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12J60U Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V... See More ⇒

 9.1. Size:186K  toshiba
 tk12j55d.pdf pdf_icon

TK12J60W

TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12J55D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VD... See More ⇒

Detailed specifications: TK10Q60W, TK10V60W, TK11A65W, TK11P65W, TK11Q65W, TK11S10N1L, TK12A60W, TK12E60W, IRLZ44N, TK12P60W, TK12Q60W, TK12V60W, TK14A65W, TK14A65W5, TK14C65W, TK14C65W5, TK14E65W

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