TK12J60W Datasheet and Replacement
Type Designator: TK12J60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3P
TK12J60W substitution
TK12J60W Datasheet (PDF)
tk12j60w.pdf

TK12J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12J60WTK12J60WTK12J60WTK12J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk12j60u.pdf

TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V
tk12j55d.pdf

TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD
Datasheet: TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , IRFP260N , TK12P60W , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W .
History: IPI80P04P4-07 | CPC3720 | APT30M36B2LL | SVT4607SA
Keywords - TK12J60W MOSFET datasheet
TK12J60W cross reference
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History: IPI80P04P4-07 | CPC3720 | APT30M36B2LL | SVT4607SA



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