IRFU024N Datasheet and Replacement
Type Designator: IRFU024N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO251
IRFU024N substitution
IRFU024N Datasheet (PDF)
irfr024npbf irfu024npbf.pdf

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
irfu024n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFU024NFEATURESWith TO-251(IPAK) packagingUltra low on-resistanceHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC-DC convertersHigh frequency
auirfr024n auirfu024n.pdf

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S
Datasheet: IRFU010 , IRFU012 , IRFU014 , IRFU014A , IRFU015 , IRFU020 , IRFU022 , IRFU024A , 5N65 , IRFU025 , IRFU110 , IRFU110A , IRFU111 , IRFU120 , IRFU1205 , IRFU120A , IRFU120N .
History: SPB80N03S2 | IRFD020PBF | IRFD113PBF | P0550EI | RJK6020DPK | APQ10SN60AH
Keywords - IRFU024N MOSFET datasheet
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History: SPB80N03S2 | IRFD020PBF | IRFD113PBF | P0550EI | RJK6020DPK | APQ10SN60AH



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