All MOSFET. TK14N65W Datasheet

 

TK14N65W Datasheet and Replacement


   Type Designator: TK14N65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 13.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-247
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TK14N65W Datasheet (PDF)

 ..1. Size:245K  toshiba
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TK14N65W

TK14N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14N65WTK14N65WTK14N65WTK14N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 0.1. Size:242K  toshiba
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TK14N65W

TK14N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14N65W5TK14N65W5TK14N65W5TK14N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

 9.1. Size:293K  st
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TK14N65W

 9.2. Size:332K  st
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TK14N65W

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