TK14N65W5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: TK14N65W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 13.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-247

TK14N65W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TK14N65W5 Datasheet (PDF)

..1. Size:242K toshiba
tk14n65w5.pdf

TK14N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14N65W5TK14N65W5TK14N65W5TK14N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

6.1. Size:245K toshiba
tk14n65w.pdf

TK14N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14N65WTK14N65WTK14N65WTK14N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

9.1. Size:293K st
stk14n10.pdf