TK16C60W Datasheet. Specs and Replacement
Type Designator: TK16C60W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: I2PAK
TK16C60W substitution
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TK16C60W datasheet
tk16c60w.pdf
TK16C60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16C60W TK16C60W TK16C60W TK16C60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
Detailed specifications: TK14G65W5, TK14N65W, TK14N65W5, TK14V65W, TK15S04N1L, TK160F10N1, TK16A60W, TK16A60W5, STP75NF75, TK16E60W, TK16E60W5, TK16G60W, TK16G60W5, TK16J60W, TK16J60W5, TK16N60W, TK16N60W5
Keywords - TK16C60W MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HGN045NE4SL | HGN040N06S
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