All MOSFET. TK16C60W Datasheet

 

TK16C60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16C60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 15.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: I2PAK

 TK16C60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16C60W Datasheet (PDF)

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 tk16c60w.pdf

TK16C60W TK16C60W

TK16C60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16C60WTK16C60WTK16C60WTK16C60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

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